ROHM Semiconductor R6000ENHTB1 MOSFETs 600V 0.5A, SOP8, ພາວເວີ MOSFET ສະຫຼຸບສຽງຕ່ຳ

Fall Time: 251 ns

Rise Time: 27 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 4.3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 37 ns

Id - Continuous Drain Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 8.8 Ohms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 5 V