ROHM Semiconductor HP8ME5TB1 MOSFETs 100V 8.5A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8ME5 is a low on-resistance MOSFET ideal for switching applications.

Fall Time: 5 ns, 50 ns

Rise Time: 6 ns, 8.7 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 2.9 nC, 19.7 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 20 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6 ns, 7.3 ns

Typical Turn-Off Delay Time: 13 ns, 98 ns

Id - Continuous Drain Current: 8.5 A, 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.8 S

Rds On - Drain-Source Resistance: 193 mOhms, 273 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V