ROHM Semiconductor BM3G005MUV-LBE2 ຂັ້ນພະລັງງານ GaN HEMT Nano Cap, EcoGaN, 650V 50mohm 2MHz, ຂັ້ນພະລັງງານ GaN HEMT IC

Fall Time: 2.7 ns

Rise Time: 5 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Typical Turn-On Delay Time: 14 ns

Maximum Operating Frequency: 2 MHz

Typical Turn-Off Delay Time: 19 ns

Id - Continuous Drain Current: 68.8 A

Maximum Operating Temperature: + 105 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 70 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V