Renesas Electronics RJE0601JPE-00#J3 MOSFETs MOSFET

Width: mm

Height: mm

Length: mm

Fall Time: 2.2 us

Rise Time: 12.5 us

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 50 W

Vgs - Gate-Source Voltage: - 16 V, + 2.5 V

Typical Turn-On Delay Time: 12.6 us

Typical Turn-Off Delay Time: 3.7 us

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 8.4 S

Rds On - Drain-Source Resistance: 27 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V