Renesas Electronics RBA160N04AHPF-4UA01#GB0 MOSFETs ລົດຍົນອັດຕະໂນມັດ MOS MP-25LZU ANL3

Fall Time: 22 ns

Rise Time: 22 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 157 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 32 ns

Typical Turn-Off Delay Time: 97 ns

Id - Continuous Drain Current: 160 A

Maximum Operating Temperature: + 175 C

Rds On - Drain-Source Resistance: 1.25 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 4 V