Renesas Electronics NP16N06YLL-E1-AY MOSFETs POWER TRS2 AUTOMOTIVE MOS 8P HSON(ເປັນເອກະລາດ)

Width: 5 mm

Height: 1.45 mm

Length: 5.4 mm

Fall Time: 5 ns

Rise Time: 8 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 12 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 27.3 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 25 ns

Id - Continuous Drain Current: 16 A

Maximum Operating Temperature: + 175 C

Forward Transconductance - Min: 5 S

Rds On - Drain-Source Resistance: 35 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V