Qorvo QPD1009TR7 GaN RF Transistor DC-4 GHz, 15W, 50V GaN RF Tr

Gain: 26.8 dB

Technology: GaN

Output Power: 42.4 dBm

Configuration: Single

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Pd - Power Dissipation: 16 W

Maximum Operating Frequency: 4 GHz

Minimum Operating Frequency: 1 GHz

Id - Continuous Drain Current: 1.6 A

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 145 V