PANJIT PJD75P04E-AU_L2_006A1 MOSFETs 40V P-Channel ໂມດພະລັງງານການປັບປຸງ MOSFET

Fall Time: 33 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 297 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P Channel

Qg - Gate Charge: 59 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 75 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 54 ns

Id - Continuous Drain Current: 67 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 14.3 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V