PANJIT MMDT2222ATB6-AU_R1_000A1 BJTs - ທຣານຊິສເຕີບອລລາຣ໌ ທຣານຊິສເຕີບອລລາຣ໌ສອງຂອງຕົວຕິດພື້ນຜິວ NPN

Technology: Si

Unit Weight: 2.600 mg

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 300 at 150 mA, 10 V

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 75 V

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 35 at 0.1 mA, 10 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 1 V