PANJIT MMBTA44_R1_00001 BJTs - ບາຍເປີລ ທຣານຊິສຕໍເຣອດ NPN ທຣານຊິສຕໍເຣອດແຮງດັນສູງ VCE400V IC300mA SOT-23

Technology: Si

Unit Weight: 8.400 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 225 mW

DC Current Gain hFE Max: 200 at 10 mA, 10 V

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 500 V

Continuous Collector Current: 300 mA

Maximum DC Collector Current: 300 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 50 at 10 mA, 10 V

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 750 mV