PANJIT MMBT2907A_R1_00001 BJTs - ບາຍໂປລາ ທຣານຊິດຕໍເຣດ PNP ສະຫຼຸບປະສົງທົ່ວໄປ ທຣານຊິດຕໍເຣດສະຫຼຸບປະສົງ VCE-60V IC-600mA SOT-23

Technology: Si

Unit Weight: 8.400 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 225 mW

DC Current Gain hFE Max: 300 at - 150 mA, - 10 V

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: - 600 mA

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100 at - 150 mA, - 10 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1.6 V