onsemi TIP3055G BJTs - ບາຍເປີ Transistors 15A 60V 80W NPN

Width: 4.9 mm

Height: 16.2 - 4 mm

Length: 15.2 mm

Technology: Si

Unit Weight: 6.500 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 90 W

Gain Bandwidth Product fT: 2.5 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 1.5 A

Maximum DC Collector Current: 15 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1.1 V