onsemi NVHL1000N170M1 SiC MOSFETS SIC 1700V MOS 1O IN TO247-3L

Fall Time: 84 ns

Rise Time: 30 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 14 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 48 W

Vgs - Gate-Source Voltage: - 15 V, + 25 V

Typical Turn-On Delay Time: 5.6 ns

Typical Turn-Off Delay Time: 11 ns

Id - Continuous Drain Current: 4.2 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.6 S

Rds On - Drain-Source Resistance: 1.43 Ohms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 3.2 V