onsemi NVH4L025N065SC1 SiC MOSFETS Silicon Carbide MOSFET, N-Channel - EliteSiC ,21mohm, 650V, M2, TO247-4L

Fall Time: 8 ns

Rise Time: 19 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 164 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 348 W

Vgs - Gate-Source Voltage: - 8 V, + 22 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 32 ns

Id - Continuous Drain Current: 99 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 27 S

Rds On - Drain-Source Resistance: 28.5 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.3 V