onsemi NVH4L015N065SC1 Silicon Carbide MOSFET, ເທົ່າຫນຶ່ງ, ຊ່ອງ N, 142 A, 650 V, 18 Milliohms, TO-247, 4 ຂາ

No. of Pins: 4

Channel Type: N Channel

Power Dissipation: 500 W

Transistor Case Style: TO-247

Drain Source Voltage Vds: 650 V

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 142 A

Drain Source On State Resistance: 18 mOhm

Gate Source Threshold Voltage Max: 4.3 V

Datasheet