onsemi NVBG020N120SC1 SiC MOSFETS SIC MOS D2PAK-7L 20MOHM 1

Fall Time: 9 ns

Rise Time: 20 ns

Technology: SiC

Unit Weight: 4.675 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 220 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 468 W

Vgs - Gate-Source Voltage: - 15 V, + 25 V

Typical Turn-On Delay Time: 22 ns

Typical Turn-Off Delay Time: 42 ns

Id - Continuous Drain Current: 98 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 34 S

Rds On - Drain-Source Resistance: 28 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.3 V