onsemi NTP125N60S5H MOSFETs Power MOSFET, N-Channel, SUPERFET V, FAST, 600 V, 22 A, 125 mohm, TO-220 ພາວເອີ MOSFET, ຊ່ອງ N, SUPERFET V, ລະດັບສູງ, 600 V, 22 A, 125 mohm, TO-220

Fall Time: 2.66 ns

Rise Time: 6.02 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: SIngle

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 37.3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 152 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 21 ns

Typical Turn-Off Delay Time: 59.8 ns

Id - Continuous Drain Current: 22 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 21.7 S

Rds On - Drain-Source Resistance: 125 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4.3 V