onsemi NTMS10P02R2G MOSFET 20V 10A ຊ່ອງ P

Width: 4 mm

Height: 1.5 mm

Length: 5 mm

Fall Time: 110 ns, 125 ns

Rise Time: 40 ns, 100 ns

Technology: Si

Unit Weight: 74 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 48 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 100 ns, 110 ns

Id - Continuous Drain Current: 8.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 30 S

Rds On - Drain-Source Resistance: 20 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V