onsemi NTMFS0D4N04XMT1G MOSFETs Power MOSFET, ເປັນເອກະລັກ, ຊ່ອງ N, 40V, 0.42mohm, 509A, SO8-FL 5x6 Power MOSFET, ເປັນເອກະລັກ, ຊ່ອງ N, 40V, 0.42mohm, 509A, SO8-FL 5x6

Fall Time: 13 ns

Rise Time: 11.1 mm

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 133 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 197 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 34.5 ns

Typical Turn-Off Delay Time: 49.4 ns

Id - Continuous Drain Current: 509 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 286 S

Rds On - Drain-Source Resistance: 420 uOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V