onsemi NTMD6P02R2G MOSFET 20V 6A ຊ່ອງ P

Width: 4 mm

Height: 1.5 mm

Length: 5 mm

Fall Time: 80 ns, 50 ns

Rise Time: 65 ns, 20 ns

Technology: Si

Unit Weight: 74 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 35 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 17 ns, 15 ns

Typical Turn-Off Delay Time: 50 ns, 85 ns

Id - Continuous Drain Current: 7.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 15 S

Rds On - Drain-Source Resistance: 27 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V