ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ
Width: 1.25 mm
Height: 0.9 mm
Length: 2 mm
Fall Time: 1.5 ns
Rise Time: 1.5 ns
Technology: Si
Unit Weight: 6.200 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 8.6 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 625 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 0.86 ns
Typical Turn-Off Delay Time: 3.5 ns
Id - Continuous Drain Current: 3.3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 15 S
Rds On - Drain-Source Resistance: 133 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
