ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ
Width: 1.25 mm
Height: 0.9 mm
Length: 2 mm
Fall Time: 506 ns, 36 ns
Rise Time: 227 ns, 23 ns
Technology: Si
Unit Weight: 7.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 1.3 nC, 2.2 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 550 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V, - 8 V, + 8 V
Typical Turn-On Delay Time: 83 ns, 13 ns
Typical Turn-Off Delay Time: 786 ns, 50 ns
Id - Continuous Drain Current: 630 mA, 775 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 2 S, 2 S
Rds On - Drain-Source Resistance: 375 mOhms, 900 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V, 8 V
Vgs th - Gate-Source Threshold Voltage: 600 mV, 450 mV
