onsemi NTHD4508NT1G Power MOSFET

Type: Power MOSFET

FET Feature: Logic Level Gate

Mounting Type: Surface Mount

Power-Maximum: 1.13W

Operating temperature: -55 to 150C

Drain to Source voltage: 20V

Continuous drain current: 3A

Current - Drain (Id) (25°C): 3A

Field-effect transistor type: 2N-Channel(Dual)

Gate Charge - (when applying Vgs): 4nC@4.5V

Drain to Source on-state resistance: 75mOhm

On Voltage - (Vgs when Id is applied): 1.2V@250uA

On Resistance - (Rds when Id,Vgs is applied): 75mOhm@3.1A|4.5V

Input Capacitance - (Ciss when Vds is applied): 180pF@10V