onsemi NTH4L080N120SC1 SiC MOSFETS Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L ຊິລິກອນຄາໄບເດີ (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L

Fall Time: 5.4 ns

Rise Time: 4.2 ns

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 56 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 170 W

Vgs - Gate-Source Voltage: - 15 V, + 25 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 26.8 ns

Id - Continuous Drain Current: 29 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 11.3 S

Rds On - Drain-Source Resistance: 110 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.3 V