onsemi NTH4L060N090SC1 SiC MOSFETS Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L ຊິລິກອນຄາໄບເດີ (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L

Fall Time: 11 ns

Rise Time: 15 ns

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 87 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 221 W

Vgs - Gate-Source Voltage: - 8 V, + 22 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 29 ns

Id - Continuous Drain Current: 46 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 17 S

Rds On - Drain-Source Resistance: 84 mOhms

Vds - Drain-Source Breakdown Voltage: 900 V

Vgs th - Gate-Source Threshold Voltage: 4.3 V