onsemi NTH4L020N120SC1 SiC MOSFETS Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L ຊິລິກອນຄາບໄອດ (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L

Fall Time: 10 ns

Rise Time: 21 ns

Technology: SiC

Unit Weight: 15.649 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 220 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 510 W

Vgs - Gate-Source Voltage: - 15 V, + 25 V

Typical Turn-On Delay Time: 21.6 ns

Typical Turn-Off Delay Time: 41 ns

Id - Continuous Drain Current: 102 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3.6 S

Rds On - Drain-Source Resistance: 28 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.3 V