onsemi NTBG080N120SC1 SiC MOSFETS Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L

Fall Time: 9 ns

Rise Time: 12 ns

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 56 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 179 W

Vgs - Gate-Source Voltage: - 15 V, + 25 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 21 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 11 S

Rds On - Drain-Source Resistance: 110 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.3 V