onsemi NJW21194G BJTs - ບິໂພລາ ທຣານຊິສຕໍເຣີ 200W NPN

Width: 4.8 mm

Height: 18.7 mm

Length: 15.6 mm

Technology: Si

Unit Weight: 6.756 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 200 W

DC Current Gain hFE Max: 80

Gain Bandwidth Product fT: 4 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 400 V

Maximum DC Collector Current: 16 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 250 V

Collector-Emitter Saturation Voltage: 1.4 V