onsemi NGTB50N60FL2WG IGBT Transistors 600V/50A FAST IGBT FSII T

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 417 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 100 A