onsemi MJF45H11G BJTs - ບາຍເປີ Transistors 10A 80V 50W PNP

Width: 4.9 mm

Height: 9.24 mm

Length: 10.63 mm

Technology: Si

Unit Weight: 2.300 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 36 W

Gain Bandwidth Product fT: 40 MHz

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: 10 A

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1 V