onsemi MJE172G BJTs - ບິໂພລາ ທຣານຊິສຕໍເຕີຣ໌ 3A 80V 12.5W PNP

Width: 2.66 mm

Height: 11.04 mm

Length: 7.74 mm

Technology: Si

Unit Weight: 680 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 12.5 W

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1.7 V