onsemi FDMS1D2N03DSD MOSFETs PT11N 30/12 & PT11

Technology: Si

Unit Weight: 121.065 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 33 nC, 117 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 42 W

Vgs - Gate-Source Voltage: - 12 V, + 16 V

Id - Continuous Drain Current: 19 A, 37 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.2 mOhms, 4 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 800 mV, 1 V