onsemi BUV22G BJTs - ບາຍເປີ Transistors 40A 250V 250W NPN

Width: 26.67 mm

Height: 8.51 mm

Length: 38.86 mm

Technology: Si

Unit Weight: 1.600 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 250 W

Gain Bandwidth Product fT: 8 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 300 V

Continuous Collector Current: 40 A

Maximum DC Collector Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 250 V

Collector-Emitter Saturation Voltage: 1.5 V