onsemi BU406G BJTs - ບາຍໂປລາ ທຣານຊິສຕໍເຣີ 7A 200V 60W NPN

Width: 4.82 mm

Height: 9.28 mm

Length: 10.28 mm

Technology: Si

Unit Weight: 6 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 60 W

Gain Bandwidth Product fT: 10 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 400 V

Continuous Collector Current: 7 A

Maximum DC Collector Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 200 V

Collector-Emitter Saturation Voltage: 1 V