onsemi BC847BPDXV6T1G BJTs - ທຣານຊິສຕໍ່ສອງຂອງບາຍໂປລາ 100mA 50V ຄູ່ຄວມສົມບູນ

Width: 1.2 mm

Height: 0.55 mm

Length: 1.6 mm

Technology: Si

Unit Weight: 3 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 500 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V, 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 600 mV, 650 mV