onsemi 2N6491G BJTs - ບິໂພລາ ແທຣນຊິສຕໍເຣີ 15A 80V 75W PNP

Width: 4.83 mm

Height: 15.75 mm

Length: 10.53 mm

Technology: Si

Unit Weight: 6 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1.8 W

Gain Bandwidth Product fT: 5 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 90 V

Continuous Collector Current: 15 A

Maximum DC Collector Current: 15 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 3.5 V