NXP MRFE6VP6600NR3 ອະນຸວັດ RF Power MOSFET Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 600 W CW, 50 V

Gain: 24.7 dB

Technology: Si

Unit Weight: 3.049 g

Output Power: 600 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 2 Channel

Operating Frequency: 1.8 MHz to 600 MHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 28 S

Vds - Drain-Source Breakdown Voltage: 133 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V