NXP A5G35H055NT4 RF Power MOSFET Airfast RF Power GaN ຕູ້ເພີ່ມສະຫລຸບ, 3400-3600 MHz, 7.6 W ສະເລ່ຍ, 48 V

Technology: GaN-on-Si

Output Power: 7.6

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Number of Channels: 2 Channel

Vgs - Gate-Source Voltage: - 16 V

Maximum Operating Frequency: 3.6 GHz

Minimum Operating Frequency: 3.4 GHz

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 125 V

Vgs th - Gate-Source Threshold Voltage: - 3 V