NXP A5G26H605W19NR3 ອາວຸດ GaN FETs Airfast RF Power GaN Transistor, 2496-2690 MHz, 85 W Avg., 48 V

Technology: GaN-on-Si

Output Power: 85 W

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Maximum Operating Frequency: 2.69 GHz

Minimum Operating Frequency: 2.496 GHz

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 125 V