NXP A5G07H800W19NR3 ຕຣານຊິສຕໍເຕີ GaN FETs Airfast RF Power GaN, 717-850 MHz, 112 W Avg., 50 V

Technology: GaN-on-Si

Output Power: 112 W

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Maximum Operating Frequency: 850 MHz

Minimum Operating Frequency: 717 MHz

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 125 V