NXP A3T23H300W23SR6 RF Power MOSFET Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 63 W Avg., 30 V

Gain: 15.6 dB

Technology: Si

Unit Weight: 26.393 mg

Output Power: 63 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 2.3 GHz to 2.4 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 3.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 65 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V