NXP A3T19H455W23SR6 RF Power MOSFET Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V

Gain: 16.4 dB

Technology: Si

Output Power: 81 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 1.93 GHz to 1.99 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 3.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 65 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V