NXP A2V07H400-04NR3 RF Power MOSFET Airfast RF Power LDMOS Transistor, 420-851 MHz, 107 W Avg., 48 V

Gain: 19.9 dB

Technology: Si

Unit Weight: 3.081 g

Output Power: 107 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 2 Channel

Operating Frequency: 595 MHz to 851 MHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 2.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 105 V

Vgs th - Gate-Source Threshold Voltage: 1.7 V