NXP A2T09D400-23NR6 ອາຍຣົບພາວເມັນ MOSFET AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V

Gain: 17.9 dB

Technology: Si

Unit Weight: 5.285 g

Output Power: 93 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 716 MHz to 960 MHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 2.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 70 V

Vgs th - Gate-Source Threshold Voltage: 2 V