NXP A2T08VD020NT1 RF Power MOSFET Airfast RF Power LDMOS Transistor, 720-960 MHz, 2 W Avg., 48 V

Gain: 19.1 dB

Technology: Si

Unit Weight: 399.600 mg

Output Power: 2 W

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 728 MHz to 960 MHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 64 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 105 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V