NXP MRFE8VP8600HSR5 ອະນຸປະກອນ RF Power MOSFET 140 W ສະເລ່ຍ ໃນຊ່ວງ 470-870 MHz, 50 V RF Power LDMOS Transistor

Gain: 21 dB

Technology: Si

Unit Weight: 13.264 g

Output Power: 140 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 470 MHz to 860 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.25 kW

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 17 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 19.4 S

Vds - Drain-Source Breakdown Voltage: 115 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V