NXP MRF300BN ອະນຸປະກອນ RF Power MOSFET RF Power LDMOS Transistor, 300 W CW ເກີນ 1.8-250 MHz, 50 V

Gain: 20.4 dB

Technology: Si

Unit Weight: 7.358 g

Output Power: 330 W

Mounting Style: Through Hole

Transistor Type: LDMOS FET

Operating Frequency: 1.8 MHz to 250 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 272 W

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 28 S

Vds - Drain-Source Breakdown Voltage: 133 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V