NXP MRF13750HSR5 ອະນຸວັດ RF Power MOSFET RF Power LDMOS Transistor 750 W CW ເກີນ 700-1300 MHz, 50 V

Gain: 17.2 dB

Technology: Si

Output Power: 700 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 700 MHz to 1.3 GHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.333 kW

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 2.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 105 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V