NXP AFT05MS004NT1 ອະນຸວັດ RF Power MOSFET Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V

Gain: 20.9 dB

Technology: Si

Unit Weight: 50.800 mg

Output Power: 4.9 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Operating Frequency: 136 MHz to 941 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 28 W

Vgs - Gate-Source Voltage: + 12 V

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 4 S

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V