NXP A5G26S004NT6 RF Power MOSFET Airfast RF Power GaN Transistor, 2300-2690 MHz, 24 dBm Avg., 48 V

Technology: GaN-on-Si

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Vgs - Gate-Source Voltage: - 16 V

Id - Continuous Drain Current: 10 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 125 V

Vgs th - Gate-Source Threshold Voltage: - 2.6 V